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    小信號場效應晶體管: 53,503 個篩選結果
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    配置 (50)
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    最小漏源擊穿電壓 (50)
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    最大漏極電流 (Abs) (ID) (50)
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    最大漏極電流 (ID) (50)
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    最大漏源導通電阻 (50)
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    制造商 (50)
    元件數量 (8)
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    端子數量 (21)
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    極性/信道類型 (5)
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    Most Relevant Technical Compliance Operating Conditions Physical Other
    對比 制造商型號 制造商 綜合價格
    風險等級 是否無鉛 生命周期 極性/信道類型 表面貼裝
    配置 端子數量 最小漏源擊穿電壓 元件數量 最大漏極電流 (Abs) (ID) 最大漏極電流 (ID) 最大漏源導通電阻 其他特性 最大反饋電容 (Crss) FET 技術 工作模式 功耗環境最大值 最大功率耗散 (Abs) 晶體管應用
    晶體管元件材料
    JEDEC-95代碼 JESD-30 代碼 JESD-609代碼 認證狀態 參考標準
    濕度敏感等級 最高工作溫度 最低工作溫度 峰值回流溫度(攝氏度) 處于峰值回流溫度下的最長時間
    封裝主體材料 封裝形狀 封裝形式 端子面層
    端子形式
    端子位置
    Source Content uid
    Modified On
    零件包裝代碼
    包裝說明
    針數
    制造商包裝代碼
    是否符合REACH標準
    Country Of Origin
    ECCN代碼
    交付時間
    YTEOL
    HTS代碼
    Date Of Intro
    對比
    2V7002LT1G
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2V7002LT1G 2023-01-04 00:18:07 SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    2N7002LT1G
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2N7002LT1G 2023-01-03 21:58:09 SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.5 8541.21.00.95
    對比
    2N7002,215
    Nexperia 查詢價格
    Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL 2N7002,215 2023-03-07 02:01:11 TO-236 3 SOT23 compliant Mainland China EAR99 6.5 8541.21.00.95 1995-04-01
    對比
    2N7002L
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2N7002L 2023-01-03 23:45:31 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    2N7002LT3G
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2N7002LT3G 2023-01-04 01:04:09 SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    2N7002LT7G
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON TO-236 R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2N7002LT7G 2023-01-04 01:31:35 318-08 compliant Mainland China EAR99 [object Object] 6.5 2019-03-14
    對比
    2N7002
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2N7002 2023-02-04 23:11:27 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    BSS138LT3G
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS138LT3G 2023-01-03 23:06:43 SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    BVSS138LT1G
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BVSS138LT1G 2023-01-04 01:56:01 SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    BSS138LT1G
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS138LT1G 2023-01-04 02:03:32 SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    BSS84LT1G
    onsemi 查詢價格
    Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 130 mA 10 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS84LT1G 2023-01-04 00:52:46 SOT-23 SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    BSS138
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 220 mA 6 Ω LOGIC LEVEL COMPATIBLE 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS138 2023-01-04 01:44:38 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    BSS138L
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 10 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS138L 2023-01-03 22:43:01 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5
    對比
    BSS123LT1G
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 170 mA 6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS123LT1G 2023-01-03 23:26:46 SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.5 8541.29.00.95
    對比
    BSS123
    onsemi 查詢價格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 10 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW 360 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS123 2023-01-03 23:08:07 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5 8541.21.00.95 1996-09-01
    對比
    BSS84,215
    Nexperia 查詢價格
    Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 1 LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL BSS84,215 2023-03-07 02:01:11 TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant Mainland China EAR99 3 8541.21.00.95
    對比
    BST82,215
    Nexperia 查詢價格
    Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 80 V 1 175 mA 10 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 e3 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL BST82,215 2023-03-07 02:01:11 TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant Mainland China EAR99 3 2017-02-01
    對比
    BS170
    onsemi 查詢價格
    Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 500 mA 5 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-226AA O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM BS170 2023-01-04 00:59:17 TO-92 TO-92, 3 PIN 3 135AN compliant Mainland China EAR99 [object Object] 6.08
    對比
    BSS84
    onsemi 查詢價格
    Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS84 2023-01-04 02:01:00 SOT-23, 3 PIN 318-08 compliant Philippines EAR99 [object Object] 6.5
    對比
    J111-D26Z
    onsemi 查詢價格
    Yes Active N-CHANNEL NO SINGLE 3 1 30 Ω 5 pF JUNCTION DEPLETION MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM J111-D26Z 2023-01-03 22:38:48 135AR compliant Mainland China EAR99 6.08
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